Bandwidth46.4-53.0GHz, Rejection40@DC-41.8GHz, 30@56.5-60.0GHz
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High precision machining technology
Low temperature drift, high power.
Ceramic substrate, 50 Ω coplanar waveguide
Gold wire bonding
| Items | Parameters | Units |
|---|---|---|
| Center Frequency | 49.7 | GHz |
| Bandwidth | 46.4-53.0 | GHz |
| Center loss | 1.8 | dB |
| Ripple | 1.0 | dB |
| VSWR | 1.7:1 | |
| Group delay ripple | 0.3 | ns |
| Rejection | 40@DC-41.8GHz | dBc |
| Rejection | 30@56.5-60.0GHz | dBc |
| power | 2W CW |
| Operation Temp. | -55~+85℃ |
| Storage Temp. | -55~+125℃ |
| Outline size | L:6.0，W:1.8，h:0.26 |
1: The chip is recommended to be used in separate chambers, with one side 0.1mm away from the side wall and the surface 1.74mm away from the top cover. The ports are interchangeable;
2: Suggest using conductive adhesive for bonding;
3:芯片应安装在可伐(推荐) 或铜等与陶瓷热膨胀系数(6.7ppm /C)相近的材料，载体厚度≥0.2mm;
4: Suggest using a T-shaped structure for microstrip bonding.
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