Passband9000~9500MHz, 8.55&10.0GHz≥30dB, 8.45&10.05GHz≥40dB, Microstrip pad, MEMS
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High precision silicon-based MEMS processing technology,
50 Ω coplanar waveguide output, gold wire bonding.
| Parameters | Frequency | / | Min | Typical | Max | Units |
|---|---|---|---|---|---|---|
| Passband | / | / | 9000 | ~ | 9500 | MHz |
| Center loss | / | / | 7.3 | dB | ||
| Ripple | / | / | 1.5 | dB | ||
| Rejection | 8.55&10.0 | GHz≥ | 30 | dB | ||
| Rejection | 8.45&10.05 | GHz≥ | 40 | dB | ||
| Rejection | DC-8.35 | GHz≥ | 50 | dB | ||
| Rejection | 10.1-21 | GHz≥ | 50 | dB | ||
| Passband VSWR | / | / | 1.8 |
| Connector | Microstrip pad |
| Impedance | 50Ω |
| Power Capacity | dBm |
| Delay ripple | ≤0.6ns |
| Phase balance | ≤±5° |
| Operation Temp. | -55~+85℃ Design assurance |
| Storage Temp. | -55~+125℃ Design assurance |
| Quality Grade | Industrial grade |
| ROHS | Compliant Available |
| Filter Category | MEMS |
1. The chip is recommended to be installed in a metal cavity, with a distance of 0.1mm from the side walls on both sides of the chip, and a gap of ≥ 3mm between the upper surface of the chip and the metal shielding cover plate,
2. It is recommended to use low-temperature solder or low stress conductive adhesive for chip soldering,
3. The chip should be installed on a carrier with a thermal expansion coefficient equivalent to that of silicon (2.9ppm/℃), such as Kovar, with a carrier thickness of ≥ 0.2mm,
4、微带线与芯片键合时，建议使用 50μm×10μm 的金 带或 2 根 25μm 的金丝，要求金丝（金带）尽可能短；
| Size Code | Mini value (mm) | Nominal value (mm) | Max value (mm) |
|---|---|---|---|
| L | 3.9 | 4.0 | 4.1 |
| W | 2.9 | 3.0 | 3.1 |
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