Passband5850~6150MHz, 5.5&6.6GHz≥30dB, 5.4&6.65GHz≥40dB, Microstrip pad, MEMS
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High precision silicon-based MEMS processing technology,
50 Ω coplanar waveguide output, gold wire bonding.
| Parameters | Frequency | / | Min | Typical | Max | Units |
|---|---|---|---|---|---|---|
| Passband | / | / | 5850 | ~ | 6150 | MHz |
| Center loss | / | / | 6.0 | dB | ||
| Ripple | / | / | 1.0 | dB | ||
| Rejection | 5.5&6.6 | GHz≥ | 30 | dB | ||
| Rejection | 5.4&6.65 | GHz≥ | 40 | dB | ||
| Rejection | DC-5.2 | GHz≥ | 50 | dB | ||
| Rejection | 6.85-20 | GHz≥ | 50 | dB | ||
| Passband VSWR | / | / | 1.6 |
| Connector | Microstrip pad |
| Impedance | 50Ω |
| Power Capacity | 35dBm Design assurance |
| Delay ripple | ≤1.2ns |
| Phase balance | ≤±5° |
| Operation Temp. | -55~+85℃ Design assurance |
| Storage Temp. | -55~+125℃ Design assurance |
| Quality Grade | Industrial grade |
| ROHS | Compliant Available |
| Filter Category | MEMS |
1. The chip is recommended to be installed in a metal cavity, with a distance of 0.1mm from the side walls on both sides of the chip, and a gap of ≥ 3mm between the upper surface of the chip and the metal shielding cover plate,
2. It is recommended to use low-temperature solder or low stress conductive adhesive for chip soldering,
3. The chip should be installed on a carrier with a thermal expansion coefficient equivalent to that of silicon (2.9ppm/℃), such as Kovar, with a carrier thickness of ≥ 0.2mm,
4. When bonding microstrip lines to chips, it is recommended to use a 50 μ m × 10 μ m gold strip or two 25 μ m gold wires, with the gold wire (gold strip) as short as possible,
5. When the passband frequency of silicon-based MEMS microstrip bandpass filters is above 10GHz, it is recommended to use a T-shaped structure for matching at the microstrip line bonding.
| Size Code | Mini value (mm) | Nominal value (mm) | Max value (mm) |
|---|---|---|---|
| L | 5.4 | 5.5 | 5.6 |
| W | 4.0 | 4.1 | 4.2 |
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