Bandwidth DC-33.2GHz, Rejection 45@40.0-45.0GHz, 30@45.0-58.0GHz
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High precision machining technology
Low temperature drift, high power.
Ceramic substrate, 50 Ω coplanar waveguide
Gold wire bonding
| Items | Parameters | Units |
| Center Frequency | 16.5 | GHz |
| Bandwidth | DC-33.2 | GHz |
| Passband IL | 2.0 | dB |
| Ripple | 2.0 | dB |
| VSWR | 1.7:1 | |
| Group delay ripple | 0.4 | ns |
| Rejection | 45@40.0-45.0GHz | dBc |
| Rejection | 30@45.0-58.0GHz | dBc |
| power | 0.5W CW |
| Operation Temp. | -55~+85℃ |
| Storage Temp. | -55~+125℃ |
| Outline size | L：3.0，W：1.5，h：0.26 |
1: The chip is recommended to be used in separate chambers, with one side 0.1mm away from the side wall and the surface 1.74mm away from the top cover. The ports are interchangeable;
2: Suggest using conductive adhesive for bonding;
3: The chip should be installed on materials such as Kovar (recommended) or copper with a thermal expansion coefficient similar to that of ceramics (6.7ppm/C), and the carrier thickness should be ≥ 0.2mm;
4: Suggest using a T-shaped structure for microstrip bonding.
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