Bandwidth4.6-5.3GHz, Rejection40@DC-3.8GHz, 40@6.1-11.0GHz
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High precision machining technology
Low temperature drift, high power.
Ceramic substrate, 50 Ω coplanar waveguide
Gold wire bonding
| Items | Parameters | Units |
|---|---|---|
| Center Frequency | 4.95 | GHz |
| Bandwidth | 4.6-5.3 | GHz |
| Center loss | 1.8 | dB |
| Ripple | 1.0 | dB |
| VSWR | 1.7:1 | |
| Group delay ripple | 0.6 | ns |
| Rejection | 40@DC-3.8GHz | dBc |
| Rejection | 40@6.1-11.0GHz | dBc |
| power | 2W CW |
| Operation Temp. | -55~+85℃ |
| Storage Temp. | -55~+125℃ |
| Outline size | L：6.5，W：5.0，h：0.39 |
1: The chip is recommended to be used in separate chambers, with one side 0.1mm away from the side wall and the surface 1.61mm away from the top cover. The ports are interchangeable;
2: Suggest using conductive adhesive for bonding;
3: The chip should be installed on materials such as Kovar (recommended) or copper with a thermal expansion coefficient similar to that of ceramics (6.7ppm/C), and the carrier thickness should be ≥ 0.2mm;
4: Suggest using a T-shaped structure for microstrip bonding.
5：由于加工精度误差个别产品会有调试胶补偿；
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