Bandwidth3.91-4.01GHz, Rejection40@DC-3.5GHz, 40@4.6-9.0GHz
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High precision machining technology
Low temperature drift, high power.
Ceramic substrate, 50 Ω coplanar waveguide
Gold wire bonding
| Items | Parameters | Units |
|---|---|---|
| Center Frequency | 4.0 | GHz |
| Bandwidth | 3.91-4.01 | GHz |
| Center loss | 5.0 | dB |
| Ripple | 1.0 | dB |
| VSWR | 1.7:1 | |
| Group delay ripple | 0.5 | ns |
| Rejection | 40@DC-3.5GHz | dBc |
| Rejection | 40@4.6-9.0GHz | dBc |
| power | 2W CW |
| Work Temp. | -55~+85℃ |
| Storage Temp. | -55~+125℃ |
| Outline size | L:6.5，W:5.5，h:0.39 |
1: 0.1mm from the side wall, 2.62mm from the surface to the upper cover.
2: Suggest using conductive adhesive for bonding;
3: The chip should be installed on kovar alloy or molybdenum copper;
4: Suggest using a T-shaped structure for microstrip bonding.
Send us your requirements — our engineers will respond within one working day.
