Bandwidth36.9-44.3GHz, Rejection45@DC-33.5GHz, 45@48.2-55.0GHz
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High precision machining technology
Low temperature drift, high power.
Ceramic substrate, 50 Ω coplanar waveguide
Gold wire bonding
| Items | Parameters | Units |
|---|---|---|
| Center Frequency | 40.6 | GHz |
| Bandwidth | 36.9-44.3 | GHz |
| Center loss | 1.7 | dB |
| Ripple | 1.0 | dB |
| VSWR | 1.7:1 | |
| Group delay ripple | 0.4 | ns |
| Rejection | 45@DC-33.5GHz | dBc |
| Rejection | 45@48.2-55.0GHz | dBc |
| power | 2W CW |
| Operation Temp. | -55~+85℃ |
| Storage Temp. | -55~+125℃ |
| Outline size | L：6.5，W：1.8，h：0.26 |
1: The chip is recommended to be used in separate chambers, with one side 0.1mm away from the side wall and the surface 1.74mm away from the top cover. The ports are interchangeable;
2：芯片推荐使用低应力导电胶(如 ME8456)粘接；
2：芯片推荐使用低应力导电胶(如 ME8456)粘接；
3：芯片应安装在可伐（推荐）或钼铜等与陶瓷热膨胀系数 (6.7ppm / ℃) ,载体厚度 ≥ 0.2mm;
3：芯片应安装在可伐（推荐）或钼铜等与陶瓷热膨胀系数 (6.7ppm / ℃) ,载体厚度 ≥ 0.2mm;
4：微带线与芯片键合连接时，建议微带键合处采用T型结构进行匹配;
4：微带线与芯片键合连接时，建议微带键合处采用T型结构进行匹配;
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