Center Frequency3.0GHz, Rejection40@DC-2.4GHz, 40@3.6-8.0GHz
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High precision machining technology
Low temperature drift, high power.
Ceramic substrate, 50 Ω coplanar waveguide
Gold wire bonding
| Items | Parameters | Units |
|---|---|---|
| Center Frequency | 3.0 | GHz |
| Bandwidth | 0 | GHz |
| Center loss | 4.4 | dB |
| Ripple | 0 | dB |
| VSWR | 1.7:1 | |
| Group delay ripple | 0 | ns |
| Rejection | 40@DC-2.4GHz | dBc |
| Rejection | 40@3.6-8.0GHz | dBc |
| power | 2W CW |
| Work Temp. | -55~+85℃ |
| Storage Temp. | -55~+125℃ |
| Outline size | L:5.5，W:5.3，h:0.26 |
1:芯片建议分腔使用,单侧距侧壁0.1mm,表面距上盖2.75mm,端口可互换;
2: Suggest using conductive adhesive for bonding;
3: The chip should be installed on kovar alloy or molybdenum copper;
4: Suggest using a T-shaped structure for microstrip bonding.
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