Center Frequency2.48GHz, Rejection30@DC-2.2GHz, 30@2.8-6.5GHz
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High precision machining technology
Low temperature drift, high power.
Ceramic substrate, 50 Ω coplanar waveguide
Gold wire bonding
| Items | Parameters | Units |
|---|---|---|
| Center Frequency | 2.48 | GHz |
| Bandwidth | 0 | GHz |
| Center loss | 4.9 | dB |
| Ripple | 0 | dB |
| VSWR | 1.7:1 | |
| Group delay ripple | 0 | ns |
| Rejection | 30@DC-2.2GHz | dBc |
| Rejection | 30@2.8-6.5GHz | dBc |
| power | 1W CW |
| Work Temp. | -55~+85℃ |
| Storage Temp. | -55~+125℃ |
| Outline size | L:7.5，W:6.5，h:0.39 |
1: 0.1mm from the side wall, 2.62mm from the surface to the upper cover.
2: Suggest using conductive adhesive for bonding;
3: The chip should be installed on kovar alloy or molybdenum copper;
4: Suggest using a T-shaped structure for microstrip bonding.
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