HotLine (+86) 15608095669 中文 / EN
Categories
Categories RF Filter
STBP276-3R6-K835 Thin film filter
RF Filter

Thin film filter STBP276-3R6-K835

Bandwidth25.8-29.4GHz, Rejection40@DC-23.7GHz, 40@32.0-44.0GHz

Model
STBP276-3R6-K835
Stock
In stock: 37
Address
BLD# 4-3A, No. 118 Hangtian Road, Chenghua District, Chengdu, Sichuan, China.

To check stock availability, search under "In-stock Products" on the Dianzibuy store.
Any change to the content of this page is subject to change without notice. Please confirm the specifications before ordering.
Products must not be used for any unlawful purpose; the customer bears any loss arising from unlawful use.

Downloads

Description

Product features

High precision machining technology

Low temperature drift, high power.

Ceramic substrate, 50 Ω coplanar waveguide

Gold wire bonding

Tech specifications

ItemsParametersUnits
Center Frequency27.6GHz
Bandwidth25.8-29.4GHz
Center loss2.0dB
Ripple1.0dB
VSWR1.7:1
Group delay ripple0.4ns
Rejection40@DC-23.7GHzdBc
Rejection40@32.0-44.0GHzdBc

其它要求:设计保证

power2W  CW
Operation Temp.-55 ~ +85℃
Storage Temp.-55 ~ +125℃
Outline sizeL:7.0,W:2.5,h:0.26

外形图:端口居中

Suggested PCB Layout

Note

1: The chip is recommended to be used in separate chambers, with one side 0.1mm away from the side wall and the surface 1.74mm away from the top cover. The ports are interchangeable;

2:芯片推荐使用低应力导电胶(如 ME8456)粘接;

3: The chip should be installed on materials such as Kovar (recommended) or copper with a thermal expansion coefficient similar to that of ceramics (6.7ppm/C), and the carrier thickness should be ≥ 0.2mm;

4:微带线与芯片键合连接时,建议微带键合处采用T型结构进行匹配;

Reference picture

Schematic diagram

Typical test curve

Need custom specifications?

Send us your requirements — our engineers will respond within one working day.