Bandwidth21.8-26.8GHz, Rejection40@DC-18.8GHz, 40@28.8-45.0GHz
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High precision machining technology
Low temperature drift, high power.
Ceramic substrate, 50 Ω coplanar waveguide
Gold wire bonding
| Items | Parameters | Units |
|---|---|---|
| Center Frequency | 24.3 | GHz |
| Bandwidth | 21.8-26.8 | GHz |
| Center loss | 1.6 | dB |
| Ripple | 1.0 | dB |
| VSWR | 1.7:1 | |
| Group delay ripple | 0.4 | ns |
| Rejection | 40@DC-18.8GHz | dBc |
| Rejection | 40@28.8-45.0GHz | dBc |
| power | 2W CW |
|---|---|
| Operation Temp. | -55~+85℃ |
| Storage Temp. | -55~+125℃ |
| Outline size | L:7.0，W:2.5，h:0.26 |
1: 0.1mm from the side wall, 1.75mm from the surface to the upper cover.
2:标贴式滤波器；芯片推荐使用低应力导电胶(如 ME8456)粘接；
3: 芯片应安装在可伐（推荐）或钼铜等与陶瓷热膨胀系数 (6.7ppm / ℃) ,载体厚度 ≥ 0.2mm;3: 芯片应安装在可伐（推荐）或钼铜等与陶瓷热膨胀系数 (6.7ppm / ℃) ,载体厚度 ≥ 0.2mm;
4: Suggest using a T-shaped structure for microstrip bonding.
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