Bandwidth21.0-22.6GHz, Rejection40@DC-19.2GHz, 40@24.1-36.0GHz
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High precision machining technology
Low temperature drift, high power.
Ceramic substrate, 50 Ω coplanar waveguide
Gold wire bonding
| Items | Parameters | Units |
|---|---|---|
| Center Frequency | 21.8 | GHz |
| Bandwidth | 21.0-22.6 | GHz |
| Center loss | 2.4 | dB |
| Ripple | 1.0 | dB |
| VSWR | 1.7:1 | |
| Group delay ripple | 0.4 | ns |
| Rejection | 40@DC-19.2GHz | dBc |
| Rejection | 40@24.1-36.0GHz | dBc |
| power | 2W CW |
| Operation Temp. | -55~+85℃ |
| Storage Temp. | -55~+125℃ |
| Outline size | L:8.5，W:3.0，h:0.26 |
1: 0.1mm from the side wall, 1.75mm from the surface to the upper cover.
2: Suggest using conductive adhesive for bonding;
3: The chip should be installed on materials such as Kovar (recommended) or copper with a thermal expansion coefficient similar to that of ceramics (6.7ppm/C), and the carrier thickness should be ≥ 0.2mm;
4: Suggest using a T-shaped structure for microstrip bonding.
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