Capacitance value100PF, Withstand voltage100V, Silicon-based chip capacitor
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● High-density 3D silicon-based MIS chip capacitor.
Surface pure gold electrode, suitable for micro assembly processes such as gold wire and gold ribbon.
Suitable for Au/Sn, Au/Si, Au/Ge eutectic soldering, as well as Sn/Pb and conductive adhesive bonding.
| Parameters | Min | Typical | Max | Units |
|---|---|---|---|---|
| Capacitance value | 100 | PF | ||
| Capacitance error | ±20% | |||
| Withstand voltage | 100 | V | ||
| Operation Temp. | -55 | ~ | +150 | ℃ |
| IL | 0.1 | dB@18GHz | ||
| IL | 0.2 | dB@40GHz |
| Quality Grade | Industrial grade |
| ROHS | Compliant Available |
| Other | Silicon-based chip capacitor |
| Size Code | size | Units |
|---|---|---|
| L | 0.3-0.36 | mm |
| W | 0.3-0.36 | mm |
| T | 0.125 | mm |
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