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ALNA0.2T0.4G P-band low-noise amplifier
RF Amplifier

P-band low-noise amplifier ALNA0.2T0.4G

200~400MHz, Gain60dB, Noise Temp.43K, P-1dB8dBm, N

Model
ALNA0.2T0.4G
Stock
Custom order
Address
BLD# 4-3A, No. 118 Hangtian Road, Chenghua District, Chengdu, Sichuan, China.

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Description

Product features

Low noise, high gain.

Main specifications

ParametersMinTypicalMaxUnits
Frequency200~400MHz
Gain60dB
Gain flatness0.4dB
Noise Temp.43K
VSWR1.4
Gain slope±0.1dB/10MHz
Gain slope±0.2dB/40MHz
Gain stability±0.1dB/hour
Gain stability±0.2dB/day
Linear group delay±0.01ns/MHz
Parabolic group delay±0.001ns/(MHz)2
Group delay ripple±0.1ns/p-p
Maxi input level0dBm
IM3-40dBcWhen outputting at -10dBm
P-1dB8dBm

Other parameters

ConnectorN -JK
Connector materialStainless steel
Impedance50Ω
SurfaceGrey
Working voltage+12-18V; SMA-K interface power supply
Working current300mA
Operation Temp.-45~+55℃ Design assurance
Storage Temp.-55~+70℃ Design assurance

Configuration(mm)

Other

Note

Store in an environment with a humidity of less than 25% and pay attention to dust and static electricity prevention.

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